View IXSH35N120A_1258218.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

High Voltage, High speed IGBT
Short Circuit SOA Capability
IXSH 35N120A
VCES IC25 VCE(sat)
= 1200 V = 70 A = 4V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C
Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A A ms
TO-247 AD
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features W
q
C C C
q
q
Mounting torque
1.13/10 Nm/lb.in.
q
6 300
g C
q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
q
International standard package JEDEC TO-247 High frequency IGBT with guaranteed Short Circuit SOA capability Fast Fall Time for switching speeds up to 20 kHz 2nd generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 6 8 400 1.2 100 4 V V mA mA nA V
Applications
q q q q
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 3 mA, VGE = 0 V = 4 mA, VCE = VGE
q
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
AC motor speed control DC servo and robot drive Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Welding
Advantages
q
q
Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92774E (12/96)
(c) 2000 IXYS All rights reserved
1-4
IXSH 35N120A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 26 170 3750 VCE = 25 V, VGE = 0 V, f = 1 MHz 235 60 150 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 40 70 80 150 400 500 10 80 150 2.5 400 700 15 900 700 190 60 100 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.25 K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXSH) Outline
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VGE = 15 V, VCE = 10 V
1.5 2.49
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
IXSH 35N120A
Fig.1 Saturation Characteristics
70
TJ = 25C
Fig.2 Output Characterstics
250
11V TJ = 25C VGE = 15V
VGE =15V
13V
60
200
IC - Amperes
IC - Amperes
50 40 30 20 10
7V 9V
13V
150 100 50 0
11V
9V 7V
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3 Collector-Emitter Voltage vs. Gate-Emitter Voltage
10 9 8 7
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.4
VGE=15V
1.3
IC = 70A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8
IC =1 7.5A IC = 35A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 70A IC = 35A IC = 17.5A
0.7 -50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5 Input Admittance
50
VCE = 10V
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
1.3
40
BV / VGE(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
30 20
TJ = 125C
BVCES IC = 3mA
10 0
TJ = 25C TJ = - 40C
4
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-4
IXSH 35N120A
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
1250
TJ = 125C RG = 10W
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
25 1250
TJ = 125C IC = 35A
18
tfi - nanoseconds
tfi - nanoseconds
1000
tfi
20
1000
tfi
17
Eoff - millijoules
750
15
750
16
500
Eoff
10
500
Eoff
15
250
0
10
20
30
40
50
60
5 70
250
0
10
20
30
40
14 50
IC - Amperes
RG - Ohms
Fig.9 Gate Charge Characteristic Curve
15 12
IC = 35A VCE = 500V
Fig.10 Turn-Off Safe Operating Area
100
10
TJ = 125C RG = 2.7W dV/dt < 5V/ns
9 6 3 0 0 50 100 150 200
IC - Amperes
VGE- Volts
1
0.1
0.01 0 200 400 600 800 1000 1200
QG - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthjJC - K/W
0.1
D=0.2 D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
S35N12 2 JNB IXSH35N120
(c) 2000 IXYS All rights reserved
4-4
Eoff - millijoules

▲Up To Search▲

Price & Availability of IXSH35N120A

	To Download IXSH35N120A Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .